標題: PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
作者: LIU, DG
CHANG, KH
LEE, CP
HSU, TM
TIEN, YC
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 15-Aug-1992
摘要: Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
URI: http://dx.doi.org/10.1063/1.351710
http://hdl.handle.net/11536/3317
ISSN: 0021-8979
DOI: 10.1063/1.351710
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 72
Issue: 4
起始頁: 1468
結束頁: 1472
Appears in Collections:Articles