標題: TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTION IN RUO2-BASED THICK-FILM RESISTORS
作者: CHIOU, BS
SHEU, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: THICK FILM RESISTORS;ELECTRICAL CONDUCTION;TCR
公開日期: 1-六月-1992
摘要: In this paper, the temperature dependence of resistance of two generic RUO2-based resistors is investigated. The resistor compositions studied are 80 wt.% glass (63 wt.% PbO - 25 wt.% B2O3 - 12 wt.% SiO2, designated as G1) - 20 wt.% RuO2 and 80 wt.% glass (55.5 wt.% PbO - 22 wt.% B2O3 - 10.5 wt.% SiO2 - 12 wt.% Al2O3, designated as G2) - 20 wt.% RuO2. The sheet resistance of resistor 80 wt.% Gl - 20 wt.% RuO2 fired at 850-degrees-C decreases as the temperature is increased from 100 K to approximately 400 K, remains a minimum value at temperatures 400 K approximately 690 K, and then increases as the temperature is further raised. A negative temperature coefficient of resistance (TCR) of approximately -480 ppm/degrees-C is obtained from 100 K to 500 K. The TCR becomes less negative when temperature increases. Three models for conduction mechanism of thick film resistors are employed to explain the experimental results. A modified model, consisting of both tunneling and parallel conduction approaches, is proposed to elucidate the change in slope in the resistance-inverse temperature curve as well as the temperature dependence of the resistance. In addition, an equivalent circuit model is proposed to describe the electrical behavior of the thick film resistors.
URI: http://dx.doi.org/10.1007/BF02655423
http://hdl.handle.net/11536/3403
ISSN: 0361-5235
DOI: 10.1007/BF02655423
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 21
Issue: 6
起始頁: 575
結束頁: 581
顯示於類別:期刊論文