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dc.contributor.authorYang, Shao-Mingen_US
dc.contributor.authorHuang, Jiun-Jiaen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorTaeng, Pei-Jeren_US
dc.contributor.authorLee, Lurng-Shehngen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:04:54Z-
dc.date.available2014-12-08T15:04:54Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1614-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/3419-
dc.identifier.urihttp://dx.doi.org/10.1109/VTSA.2008.4530792en_US
dc.description.abstractThis paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.en_US
dc.language.isoen_USen_US
dc.titleHigh charge storage characteristics of CeO2 nanocrystals for novolatile memory applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/VTSA.2008.4530792en_US
dc.identifier.journal2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAMen_US
dc.citation.spage48en_US
dc.citation.epage49en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000256564900021-
Appears in Collections:Conferences Paper


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