High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

doi:10.1109/VTSA.2008.4530792

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DC 欄位	值	語言
dc.contributor.author	Yang, Shao-Ming	en_US
dc.contributor.author	Huang, Jiun-Jia	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.contributor.author	Taeng, Pei-Jer	en_US
dc.contributor.author	Lee, Lurng-Shehng	en_US
dc.contributor.author	Tsai, Ming-Jinn	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.date.accessioned	2014-12-08T15:04:54Z	-
dc.date.available	2014-12-08T15:04:54Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1614-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3419	-
dc.identifier.uri	http://dx.doi.org/10.1109/VTSA.2008.4530792	en_US
dc.description.abstract	This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.	en_US
dc.language.iso	en_US	en_US
dc.title	High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VTSA.2008.4530792	en_US
dc.identifier.journal	2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM	en_US
dc.citation.spage	48	en_US
dc.citation.epage	49	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000256564900021	-
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