INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, BS	en_US
dc.contributor.author	CHEN, MC	en_US
dc.date.accessioned	2014-12-08T15:04:56Z	-
dc.date.available	2014-12-08T15:04:56Z	-
dc.date.issued	1992-04-09	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3454	-
dc.description.abstract	The interaction of cobalt and thermally grown field oxide (5000 angstrom) during low temperature furnace annealing (600-800-degrees-C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters from in the silicon substrate when the annealing temperature exceeds 700-degrees-C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600-degrees-C.	en_US
dc.language.iso	en_US	en_US
dc.subject	ANNEALING	en_US
dc.subject	SEMICONDUCTOR DEVICES AND MATERIALS	en_US
dc.title	INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	8	en_US
dc.citation.spage	756	en_US
dc.citation.epage	757	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1992HP54300036	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

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