標題: EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES
作者: WANG, YH
HOUNG, MP
SZE, PW
CHEN, JF
CHO, AY
電子物理學系
Department of Electrophysics
公開日期: 15-Mar-1992
摘要: Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3 x 10(14) to 1.2 x 10(15) states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.
URI: http://dx.doi.org/10.1063/1.351050
http://hdl.handle.net/11536/3485
ISSN: 0021-8979
DOI: 10.1063/1.351050
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 71
Issue: 6
起始頁: 2760
結束頁: 2764
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