標題: | TITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNING |
作者: | LOONG, WA CHIU, KD 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
公開日期: | 1-Dec-1991 |
摘要: | Titanium mononitride (TiN) as an antireflection layer over aluminium metallization on a Si wafer (Al/Si) in submicron photolithography has been studied. Both notching and standing wave effects of non-dyed and dyed positive resists coated on TiN/Al/Si are eliminated with 0.8-mu-m designed linewidth test patterns using a g-line stepper under defocus of 0, +1 and -1-mu-m. TiN/Al/Si has a sheet resistivity of about 45 m-OMEGA/square, similar to Al/Si up to tested TiN thickness of 0.12-mu-m. Thus, TiN in the TiN/Al/Si system functions not only as a conventional diffusion barrier, but also as an antireflection layer and as a metallization layer. Selective reactive ion etching between Al and TiN can be achieved in an etchant gas mixture of 3:7 CHF3:CF4 with a DC bias of -100 V. |
URI: | http://dx.doi.org/10.1088/0268-1242/6/12/013 http://hdl.handle.net/11536/3620 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/6/12/013 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 6 |
Issue: | 12 |
起始頁: | 1170 |
結束頁: | 1174 |
Appears in Collections: | Articles |
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