標題: | Fort-nation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application |
作者: | Chen, Wei-Ren Chang, Ting-Chang Liu, Po-Tsun Tu, Chun-Hao Chi, Feng-Weng Tsao, Shu-Wei Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
關鍵字: | metal nanocrystal;nonvolatile memory;nickel-silicide |
公開日期: | 15-十二月-2007 |
摘要: | The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device. (C) 2007 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.surfcoat.2007.07.101 http://hdl.handle.net/11536/3663 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2007.07.101 |
期刊: | SURFACE & COATINGS TECHNOLOGY |
Volume: | 202 |
Issue: | 4-7 |
起始頁: | 1292 |
結束頁: | 1296 |
顯示於類別: | 會議論文 |