標題: Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
作者: Chen, Wei-Ren
Chang, Ting-Chang
Liu, Po-Tsun
Lin, Po-Sun
Tu, Chun-Hao
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 12-三月-2007
摘要: The formation of stacked Ni silicide nanocrystals by using a comixed target is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide. The memory window enough to define "1" and "0" states is obviously observed at low voltage programming conditions, and good data retention characteristics are exhibited for the nonvolatile memory application. A physical model is also proposed further to explain the saturation phenomenon of threshold voltage at different programming voltages with operation duration. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2713177
http://hdl.handle.net/11536/11029
ISSN: 0003-6951
DOI: 10.1063/1.2713177
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 11
結束頁: 
顯示於類別:期刊論文


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