标题: | Formation of stacked Ni silicide nanocrystals for nonvolatile memory application |
作者: | Chen, Wei-Ren Chang, Ting-Chang Liu, Po-Tsun Lin, Po-Sun Tu, Chun-Hao Chang, Chun-Yen 电子工程学系及电子研究所 光电工程学系 显示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公开日期: | 12-三月-2007 |
摘要: | The formation of stacked Ni silicide nanocrystals by using a comixed target is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide. The memory window enough to define "1" and "0" states is obviously observed at low voltage programming conditions, and good data retention characteristics are exhibited for the nonvolatile memory application. A physical model is also proposed further to explain the saturation phenomenon of threshold voltage at different programming voltages with operation duration. (c) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2713177 http://hdl.handle.net/11536/11029 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2713177 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 90 |
Issue: | 11 |
结束页: | |
显示于类别: | Articles |
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