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dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorCHUNG, MCen_US
dc.date.accessioned2014-12-08T15:05:08Z-
dc.date.available2014-12-08T15:05:08Z-
dc.date.issued1991-10-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02665979en_US
dc.identifier.urihttp://hdl.handle.net/11536/3668-
dc.description.abstractElectrical properties of ZnO varistors are investigated through admittance spectroscopy. The observed ac admittance dispersion is caused by the existence of two deep bulk trap levels, which are 0.31 eV and 0.245 eV, respectively, below the conduction band. The 0.31 eV level is associated with the oxygen vacancy while the origin of the 0.245 eV level is not yet clear. An equivalent circuit model for ZnO varistors is proposed that is based on the existence of deep bulk traps.en_US
dc.language.isoen_USen_US
dc.subjectVARISTORen_US
dc.subjectZNOen_US
dc.subjectADMITTANCE SPECTROSCOPYen_US
dc.titleADMITTANCE SPECTROSCOPY AND TRAPPING PHENOMENA OF ZNO BASED VARISTORSen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/BF02665979en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume20en_US
dc.citation.issue10en_US
dc.citation.spage885en_US
dc.citation.epage890en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1991GH65700026-
Appears in Collections:Conferences Paper


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