Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films

标题:	Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
作者:	Lin, Chih-Yang Lin, Chun-Chieh Huang, Chun-Hsing Lin, Chen-Hsi Tseng, Tseung-Yuen 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics
关键字:	sol-gel;SrZrO3;nonvolatile memory;resistive switching
公开日期:	15-十二月-2007
摘要:	Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
URI:	http://dx.doi.org/10.1016/j.surfcoat.2007.07.052 http://hdl.handle.net/11536/3674
ISSN:	0257-8972
DOI:	10.1016/j.surfcoat.2007.07.052
期刊:	SURFACE & COATINGS TECHNOLOGY
Volume:	202
Issue:	4-7
起始页:	1319
结束页:	1322
显示于类别：	Conferences Paper

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APA	Lin, C., Lin, C., Huang, C., Lin, C., & Tseng, T. (2007). Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films. WOS:000251618900129.
Bibtex	@article{Lin2007Resistive, title={Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films}, author={Lin, Chih-Yang and Lin, Chun-Chieh and Huang, Chun-Hsing and Lin, Chen-Hsi and Tseng, Tseung-Yuen}, journal={WOS:000251618900129}, year={2007}, url={https://ir.lib.nycu.edu.tw/handle/11536/3674?locale=zh_CN}, }