標題: | Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application |
作者: | Chen, Wei-Ren Chang, Ting-Chang Liu, Po-Tsun Tu, Chun-Hao Yeh, Jui-Lung Hsieh, Yen-Ting Wang, Ren-You Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | germanium nanocrystal;germanium oxide;rapid temperature oxidation;nonvolatile memory |
公開日期: | 15-Dec-2007 |
摘要: | A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance. (c) 2007 Elsevier B.V All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.surfcoat.2007.07.112 http://hdl.handle.net/11536/3697 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2007.07.112 |
期刊: | SURFACE & COATINGS TECHNOLOGY |
Volume: | 202 |
Issue: | 4-7 |
起始頁: | 1333 |
結束頁: | 1337 |
Appears in Collections: | Conferences Paper |
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