標題: | PROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTION |
作者: | LOONG, WA SU, AN WANG, JL CHU, CY 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | DIAZONAPHTHOQUINONE;POLY(PARA-FORMYLOXYSTYRENE);TRIPHENYLSULFONIUM HEXAFLUOROARSENATE;C5H11COOK, C23H47COOK;SURFACE TREATMENT;REACTIVE ION ETCHING |
公開日期: | 1-Sep-1991 |
摘要: | This paper presents new processes for the enhancement of oxygen reactive ion etching (RIE) resistance of two single-layer resist systems by selective incorporation of potassium ions into the resist image in solution after exposure. One resist system is diazonaphthoquinone (DAQ) and poly(p-formyloxystyrene) (PFS) mixed with a catalytic amount of triphenylsulfonium hexafluoroarsenate as a photoacid generator. After deep-UV exposure, the photoacid catalyzes the photo-Fries rearrangement of PFS to form poly(p-hydroxystyrene) (PHS); DAQ rearranges to form indene carboxylic acid and grafts into PHS via S-O bond formation. A latent image is formed by selective reaction of carboxylic groups with C5H11COOK in aqueous solution in exposed areas which are resistant to oxygen RIE. Dry developed negative-tone patterns are obtained by oxygen RIE. The other resist system is AZ1350J, dipping in C23H47COOK in hexane after deep-UV exposure. C23H47COOK selectively incorporates into unexposed areas only. Dry developed positive-tone patterns are obtained by oxygen RIE in this case. |
URI: | http://hdl.handle.net/11536/3703 |
ISSN: | 0167-9317 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 14 |
Issue: | 3-4 |
起始頁: | 237 |
結束頁: | 248 |
Appears in Collections: | Articles |