標題: | OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER |
作者: | LOONG, WA CHANG, HL 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | GAAS;OXYGEN PLASMA;ANTIREFLECTION LAYER |
公開日期: | 15-七月-1991 |
摘要: | The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective. |
URI: | http://hdl.handle.net/11536/3732 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 30 |
Issue: | 7B |
起始頁: | L1319 |
結束頁: | L1320 |
顯示於類別: | 期刊論文 |