標題: OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER
作者: LOONG, WA
CHANG, HL
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
關鍵字: GAAS;OXYGEN PLASMA;ANTIREFLECTION LAYER
公開日期: 15-七月-1991
摘要: The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.
URI: http://hdl.handle.net/11536/3732
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 30
Issue: 7B
起始頁: L1319
結束頁: L1320
顯示於類別:期刊論文