NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)

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DC 欄位	值	語言
dc.contributor.author	PAN, CL	en_US
dc.contributor.author	WU, HH	en_US
dc.contributor.author	HSIEH, TR	en_US
dc.date.accessioned	2014-12-08T15:05:12Z	-
dc.date.available	2014-12-08T15:05:12Z	-
dc.date.issued	1991-07-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3749	-
dc.description.abstract	We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (lambda = 1.3-mu-m) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10(14) cm-3 for typical commerical wafers 350-mu-m in thickness.	en_US
dc.language.iso	en_US	en_US
dc.title	NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)	en_US
dc.type	Note	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1430	en_US
dc.citation.epage	1431	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1991FY67200021	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

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