完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHUU, DSen_US
dc.contributor.authorDAI, CMen_US
dc.contributor.authorHSIEH, WFen_US
dc.contributor.authorTSAI, CTen_US
dc.date.accessioned2014-12-08T15:05:13Z-
dc.date.available2014-12-08T15:05:13Z-
dc.date.issued1991-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.347405en_US
dc.identifier.urihttp://hdl.handle.net/11536/3754-
dc.description.abstractCdS films have been grown on Corning glass by pulsed laser evaporation (PLE) and thermal evaporation (TE) techniques at a substrate temperature between room temperature and 250-degrees-C. The quality of these films is investigated by resonance Raman scattering, x-ray diffraction and optical transmittance. Our results reveal that the Raman shifts of the surface phonon mode are observed with 300 and 297 cm-1 by PLE and TE techniques, respectively, and as many as four overtones are obtained by PLE method. The difference of Raman shift between these two techniques are caused by the discrepancy of crystallite sizes which is larger for PLE technique. The crystallite sizes are in the range of 200-500 angstrom in diameter. Highly oriented films have been grown by both of the techniques even when the substrate is at room temperature.en_US
dc.language.isoen_USen_US
dc.titleRAMAN INVESTIGATIONS OF THE SURFACE-MODES OF THE CRYSTALLITES IN CDS THIN-FILMS GROWN BY PULSED LASER AND THERMAL EVAPORATIONen_US
dc.typeNoteen_US
dc.identifier.doi10.1063/1.347405en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume69en_US
dc.citation.issue12en_US
dc.citation.spage8402en_US
dc.citation.epage8404en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1991FU81200071-
dc.citation.woscount55-
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