标题: | 以Ti-W有图晶圆进行无尘室环境中HCl微污染分析研究 Study of HCl airborne molecular contamination with Ti-W pattern wafers |
作者: | 刘享星 Liu, Hsiang-Hsing 白曛绫 工学院永续环境科技学程 |
关键字: | 气态分子污染物;空降分子污染物;洁净室;无尘室微污染;離子电泳分析仪;氯化氢;Airborne molecular contamination;Clean room;micro-contamination;Ion Mobility Spectrometry;HCl |
公开日期: | 2009 |
摘要: | 随着半导体元件之线宽缩小至奈米级,晶圆尺寸也进展到了以12寸为主力,使得制程环境污染的防治重点已由微粒转移至气态分子污染物上。气态分子污染物中又以氯(Cl)离子沉积在晶圆上所造成的金属线腐蚀报废最为常见。业界目前侦测气态分子污染物之主要方法有两种:以直读仪器为主的及时性侦测方法,以及以采样加上后续分析的非即时性监测方法。两种方法各有其优缺点,但无非都是要达到及早侦测环境气态分子污染物之异常浓度,以尽早采取必要措施,提高生产良率为目的。 本研究于某厂区无尘室中,分别使用直读式IMS侦测仪以及Impinger+IC非即时性监测方法来同步监测无尘室空气中的氯离子浓度,以比较两种监测方法之差异。再以直读式IMS侦测仪长期量测结果建立无尘室内之氯化氢气体浓度分布。此外也运用有图晶圆作为侦测金属线腐蚀的方法,分别在微环境控制系统下以及实厂内以有图晶圆进行观测,以了解产生金属线腐蚀之浓度下限。 研究结果显示直读式IMS侦测仪以及Impinger+IC非即时性监测两者之数据呈正相关,无尘室内氯化氢气体浓度分布则显示较高浓度的区域为干蚀刻区; 微环境控制系统实验发现腐蚀之浓度下限为2~4ppb,而实厂发现金属线腐蚀时之平均浓度则为1.5ppb。 As the line width of semiconductor components has been shrunk into nano-scales and wafers have been progressed to the 12-inch size, the target compounds of micro-contamination control have been changed from micro-particles to the gaseous molecular pollutants of AMC (Airborne Molecular Contamination). In the AMC pollutants, the most possible species which lead to serious impact are chloride ions (Cl-). It may cause corrosion of the metal line, and scrap the wafer in huge amount. Currently, the semiconductor field detects the clean room inorganic AMC pollutants by two ways: direct-reading instrument of IMS monitoring or non-direct-reading of impinger + Ion Chromotography (IC) method which separates sampling and analysis of the AMC. In this study, both IMS and impinger + IC monitoring are used to monitor the Cl- concentration of clean room air, and the monitoring results of the two methods are compared. The Cl- concentration distribution in the clean room is established by IMS. In addition, this study uses pattern wafers to evaluate metal wire corrosion effect under controlled micro-environment as well as under real fab clean room. The results showed that monitoring data by IMS are positively correlated to those by impinger + IC method. The distribution of chloride ion concentration in the clean room environment indicated that dry etching area has relatively higher concentrations. It was also found that the critical Cl- concentration leading to the metal wire corrosion is 2 ~ 4ppb in controlled micro-environmental tests. But in a real fab clean room environment the critical one-hour averaged Cl- concentration in the ambient air is 1.5ppb. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009476519 http://hdl.handle.net/11536/37906 |
显示于类别: | Thesis |