標題: | PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST |
作者: | LOONG, WA CHANG, HW 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | POLY(BUTENE-1 SULFONE);TRIPHENYLSULFONIUM HEXAFLUOROARSENATE;POSITIVE RESIST |
公開日期: | 1-May-1991 |
摘要: | Poly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed. |
URI: | http://hdl.handle.net/11536/3803 |
ISSN: | 0167-9317 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 14 |
Issue: | 2 |
起始頁: | 101 |
結束頁: | 108 |
Appears in Collections: | Articles |