標題: PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST
作者: LOONG, WA
CHANG, HW
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
關鍵字: POLY(BUTENE-1 SULFONE);TRIPHENYLSULFONIUM HEXAFLUOROARSENATE;POSITIVE RESIST
公開日期: 1-May-1991
摘要: Poly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed.
URI: http://hdl.handle.net/11536/3803
ISSN: 0167-9317
期刊: MICROELECTRONIC ENGINEERING
Volume: 14
Issue: 2
起始頁: 101
結束頁: 108
Appears in Collections:Articles