背向散射理論應用於金氧半場效電晶體之非匹配特性研究

Abstract

在這篇論文中我們提出了幾個數學模型來呈現背向散射理論中金氧半場效電晶體裡數個參數的不匹配特性。我們從實驗中萃取了KBT層的寬度加以分析，並且運用拋物線能障理論提出了物理模型來呈現它的不匹配特性。除此之外，這篇論文中也討論到了平均自由路徑和背向散射係數的不匹配特性。為了精準的理由，我們將汲極和源極電阻考慮在我們的參數萃取和模型上。最後我們提出了一個物理模型來計算飽和區電晶體的電流不匹配效應。

In this thesis, we have derived several mathematical models to express the mismatch properties of MOS transistors based on the backscattering theory. We have extracted the KBT layer’s width from the experimental analysis and we have found a simple model to express its mismatch properties based on the parabolic potential barrier. The mean-free-path and the backscattering coefficient have also been discussed in this thesis. For the purpose of the accuracy, the source/drain series resistance has been incorporated in to our parameters extraction. Straightforwardly, we have developed a drain current mismatch model based on backscattering theory in the saturation region.