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dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.date.accessioned2014-12-08T15:05:18Z-
dc.date.available2014-12-08T15:05:18Z-
dc.date.issued2007-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2794327en_US
dc.identifier.urihttp://hdl.handle.net/11536/3852-
dc.description.abstractThe authors use a very simple sol-gel spin coating method at 900 degrees C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide-nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) HfO2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory. (C) 2007 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleNovel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memoryen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2794327en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spage2568en_US
dc.citation.epage2571en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251611900159-
Appears in Collections:Conferences Paper


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