完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, MC | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:01:33Z | - |
dc.date.available | 2014-12-08T15:01:33Z | - |
dc.date.issued | 1997-08-01 | en_US |
dc.identifier.issn | 0921-4534 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0921-4534(97)00938-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/390 | - |
dc.description.abstract | With pre-annealed treatments, high density of atomic steps were formed on the surface of the MgO substrate. The early-stage microstructure of YBa2Cu3O7-x thin films was evolved with a step-flow growth mode by pulsed laser deposition. On the as-polished MgO substrates the Volmer-Weber-type island growth mode was dominant. By means of microstrip line measurement, it was found that the films grown on the pre-annealed substrate not only have a higher critical current densities but also have a lower microwave loss than those of films deposited on as-polished substrate. The distinction existed even when the deposition condition were not optimized. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Microwave properties of YBa2Cu3O7-x deposited on MgO substrates | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0921-4534(97)00938-6 | en_US |
dc.identifier.journal | PHYSICA C | en_US |
dc.citation.volume | 282 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 1573 | en_US |
dc.citation.epage | 1574 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1997XZ90600226 | - |
顯示於類別: | 會議論文 |