矽奈米線元件在分子偵測之理論分析研究

Abstract

本論文研究領域為包含”半導體元件設計物理模式”和”生物科技”之”生醫感測”(Biosensor)。在本論文中，吾人所使用之固態電子元件即為蕭特基二極體奈米線與矽奈米線場效電晶體，感測分子為AEAPTMS-Gold nanoparticles。吾人利用TCAD模擬”矽奈米線場效電晶體”及”蕭特基二極體奈米線”之半導體元件結構特性，最佳化此兩元件之參數條件，達電導值改變量(△G)顯著之目標,得到此二種矽奈米線元件中，以蕭特基接二極體奈米線元件之逆向偏壓操作及奈米線低濃度參雜下和元件尺寸微縮下(短通道長度和窄通道寬度)之條件下，有最大電導值改變量。以此兩種不同結構之物理數值模型的最佳條件為基礎，再利用TCAD模擬設定等效接上不同生物分子，建立分子偵測之模型,來估算分子偵測靈敏度之極限,且再次驗證蕭特基接面之奈米線元件之逆向偏壓操作下,的確比矽奈米線場效電晶體更靈敏、更適合做為分子偵測的元件。利用電腦使用TCAD，可快速並有效建立欲設計之元件結構，將來可望在生醫感測領域上提供實驗有效且正確之參考資訊。

This research combines "the physical model of semiconductor device design with" biotechnology" for "Biosensor". In this research, the hardware components that we use are" silicon nanaowire field effect transistor (SiNW FET)" and" Schottky Barrier Nano-Wires (SBNW)", and the detection target molecules are AEAPTMS-Gold nanoparticles. These two different semiconductor device structures are analysed by TCAD. Based on the physical model and numerical solution of these two device structures, and TCAD was set up for an equivalent model for calculation of the limit of sensitivity in molecule detecting. Also, we have justified that SBNW device is more sensitive under reverse-bias condition than that of SiNW FET in molecule-detecting. In the future, this research will provide an effective model and correct references for the research in the field of bio-medicine detection.