| 標題: | AN SCR WITH SIMPLE MIS STRUCTURE |
| 作者: | CHANG, DCY LEE, CL LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering |
| 關鍵字: | MIS SWITCHING DEVICES;SEMICONDUCTOR |
| 公開日期: | 1-十二月-1990 |
| 摘要: | A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate. |
| URI: | http://hdl.handle.net/11536/3956 |
| ISSN: | 0021-4922 |
| 期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
| Volume: | 29 |
| Issue: | 12 |
| 起始頁: | L2169 |
| 結束頁: | L2170 |
| 顯示於類別: | 期刊論文 |

