標題: AN SCR WITH SIMPLE MIS STRUCTURE
作者: CHANG, DCY
LEE, CL
LEI, TF
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: MIS SWITCHING DEVICES;SEMICONDUCTOR
公開日期: 1-十二月-1990
摘要: A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate.
URI: http://hdl.handle.net/11536/3956
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 29
Issue: 12
起始頁: L2169
結束頁: L2170
顯示於類別:期刊論文