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dc.contributor.authorWU, JSen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorCHANG, KHen_US
dc.contributor.authorLIU, DGen_US
dc.contributor.authorLIOU, DCen_US
dc.date.accessioned2014-12-08T15:05:25Z-
dc.date.available2014-12-08T15:05:25Z-
dc.date.issued1990-11-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.103879en_US
dc.identifier.urihttp://hdl.handle.net/11536/3959-
dc.language.isoen_USen_US
dc.titleRESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.103879en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume57en_US
dc.citation.issue22en_US
dc.citation.spage2311en_US
dc.citation.epage2312en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1990EK41100010-
dc.citation.woscount19-
Appears in Collections:Articles