RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, JS	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	CHANG, KH	en_US
dc.contributor.author	LIU, DG	en_US
dc.contributor.author	LIOU, DC	en_US
dc.date.accessioned	2014-12-08T15:05:25Z	-
dc.date.available	2014-12-08T15:05:25Z	-
dc.date.issued	1990-11-26	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.103879	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3959	-
dc.language.iso	en_US	en_US
dc.title	RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.103879	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	57	en_US
dc.citation.issue	22	en_US
dc.citation.spage	2311	en_US
dc.citation.epage	2312	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990EK41100010	-
dc.citation.woscount	19	-
顯示於類別：	期刊論文