IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:05:26Z	-
dc.date.available	2014-12-08T15:05:26Z	-
dc.date.issued	1990-10-29	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.104007	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3984	-
dc.language.iso	en_US	en_US
dc.title	IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.104007	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	57	en_US
dc.citation.issue	18	en_US
dc.citation.spage	1904	en_US
dc.citation.epage	1906	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990EF48900024	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文