降低漏電流之高效能倍壓器電路設計

Abstract

倍壓器從1976年發展至今已有30年的歷史，但不論是何種倍壓器都有其缺點及優點，而這些倍壓器的缺點大多數都會造成電壓增益以及效率的降低，此篇論文將會改善這些缺點，提出一個全新的交錯式倍壓器電路。截至目前為止，大多數的倍壓器都有臨界電壓（Threshold Voltage）、基體效應（Body Effect）、閘極氧化層穩定度（Gate-Oxide Reliability）、逆向導通耗損（Reversion Loss）、傳導耗損（Conduction Loss）及電荷重新分佈耗損（Redistribution Loss）等種種的問題，上述種種因素會造成閘極氧化層被擊穿使得MOS電晶體損壞之外，亦會導致電壓增益與效率降低，上述的問題只要能夠獲得改善並將能量的耗損降至最低，倍壓器就能有更高的效能。 本論文所提出的交錯式倍壓器電路能夠改善或減少上述非理想因素所造成能量的損失，論文中所提的技術可以在倍壓器操作過程中有效的避免能量的損失，以增加倍壓器的電壓增益與效率，使用TSMC 0.35um 製程來實現所設計的倍壓器電路，其模擬結果可以證明本文中所提技術的正確性與效能。

Charge pump has developed for thirty years from 1976 till now. However, different kinds of charge pump have their advantages and disadvantages. The biggest problem among these charge pump circuits is that most of these charge pumps would cause voltage gain and efficiency lower than the ideal values due to the undesired loss. In this thesis, the disadvantage that charge pump circuits are alleviated and a new cross-coupled charge pump circuit is presented to enhance the performance of energy loss. Till now, most charge pumps all have the same problems such as, threshold voltage drop, body effect, gate-oxide reliability, reversion loss, conduction loss and redistribution loss. These problems may cause the layer of gate-oxide broken and the system failure. Besides, the breakdown not only makes damage to MOS transistors but also decreases voltage gain and, thereby diminishing conversion efficiency of charge pump. Therefore, the most important things that the designers need to do are to minimize the effects of these disadvantages. The cross coupled charge pump mentioned in this thesis will improve or alleviate the above problems and thus increase the efficiency of charge pump circuits. The proposed technique can effectively avoid the energy loss in the operation of charge pump circuits. The test chip was designed by TSMC 0.35um technology. Simulation results can demonstrate the correctness and performance of the proposed techniques.