保溫材鈣金屬污染對閘極氧化層的影響之影響及防治

Abstract

對於電晶體而言，閘極氧化層的好壞是很重要的關鍵,因此在半導體元件製程中，矽晶片表面的金屬污染所造成的良率和元件可靠度下降的後果， 也一直是半導體製程中令人關心的問題。因此每一個半導體廠莫不戰戰兢兢地使用化學用品，氣體，製程相關材料及潔淨之無塵室。在常見的污染物有微塵粒，金屬，及有機物，而其中又以金屬對元件之電特性影響最大。在VLSl製程中，若晶圓遭受到金屬雜質的污染，則製作出來的元件的電氣特性將會惡化，如閘氧介電質崩潰電壓、漏電流…等電性惡化現象。 不同種類與程度的金屬雜質導致閘極氧化層崩潰與退化是明顯可見的，鐵與鎳金屬雜質在高濃度的時候會使得薄氧化層的特性嚴重惡化。鈣金屬雜質使得崩潰電荷的衰減並且使漏電流與電應力引發漏電流的大量增加，另外銅金屬雜質會造成較多的中間能隙陷阱密度。而鋅金屬雜質對於元件的平帶電壓有較大的影響。 。 本論文針對本研究針對半導體廠常用之保溫材內所添加之鈣對半導體元件電性之影響作了有系統之分析。實驗結果看來，發現鈣金屬對閘極氧化層影響非常明顯。由上述之結果可以幫助積體電路製造業充分掌控鈣之污染，所可能造成之電性異常問題，以提高良率。

For transistors, the gate oxide layer is very important key to good or bad, so the semiconductor device manufacturing process, the silicon surface of the metal contamination caused by the decline in yields and components reliability of the consequences of the semiconductor manufacturing process has been is cause for concern. So each one semiconductor plant did not dare in fear the use of chemical products, gas, process-related materials and clean the clean room. Common pollutants in the dust grains, metals, and organic matter, rather Among them, the components of the electrical characteristics of metal on the greatest impact. In VLSl manufacturing process, if the wafer exposed to the pollution of metallic impurities, then the produced components will deteriorate the electrical properties, such as the gate oxide dielectric breakdown voltage, leakage current and other electrical ... deteriorated. Different types and levels of metal impurities lead to gate oxide breakdown and degradation is visible, iron and nickel-metal impurities in high concentrations when the thin oxide layer would make a serious deterioration in the characteristics. Calcium metal impurities makes the collapse of the charge decay and to make electrical stress induced leakage current and a significant increase in leakage current, while copper impurities will cause more energy gap trap density in the middle. The zinc metal impurities in the flat-band voltage for the components have a greater impact. . In this paper, semiconductor plant for the purpose of this study of the insulation material used in the added calcium on the electrical properties of semiconductor components were made by a systematic analysis of the impact. The results seem, found that calcium metal on the gate oxide is very obvious impact. From the above results can help the integrated circuit manufacturing industry to fully control the calcium of the contamination, which may cause the electrical abnormalities in order to increase yield.