A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	YARN, KF	en_US
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:33Z	-
dc.date.available	2014-12-08T15:05:33Z	-
dc.date.issued	1990-06-01	en_US
dc.identifier.issn	0950-0839	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4086	-
dc.language.iso	en_US	en_US
dc.title	A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY	en_US
dc.type	Article	en_US
dc.identifier.journal	PHILOSOPHICAL MAGAZINE LETTERS	en_US
dc.citation.volume	61	en_US
dc.citation.issue	6	en_US
dc.citation.spage	333	en_US
dc.citation.epage	338	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990EB21700004	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文