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NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY

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Date

1989-03-20

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DOI

10.1063/1.100747

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http://dx.doi.org/10.1063/1.100747
 https://ir.lib.nycu.edu.tw/handle/11536/4392

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期刊論文;;Articles

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