| 標題: | NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY |
| 作者: | YARN, KF WANG, YH CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 20-三月-1989 |
| URI: | http://dx.doi.org/10.1063/1.100747 http://hdl.handle.net/11536/4392 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.100747 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 54 |
| Issue: | 12 |
| 起始頁: | 1157 |
| 結束頁: | 1159 |
| 顯示於類別： | 期刊論文 |
- A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
- ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY / CHEN, HR;CHANG, CY;TSAI, KL;TSANG, JS;LEE, CP
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