Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.date.accessioned | 2014-12-08T15:05:33Z | - |
| dc.date.available | 2014-12-08T15:05:33Z | - |
| dc.date.issued | 1990-06-01 | en_US |
| dc.identifier.issn | 0950-0839 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/4087 | - |
| dc.language.iso | en_US | en_US |
| dc.title | ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY | en_US |
| dc.type | Article | en_US |
| dc.identifier.journal | PHILOSOPHICAL MAGAZINE LETTERS | en_US |
| dc.citation.volume | 61 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 339 | en_US |
| dc.citation.epage | 342 | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.identifier.wosnumber | WOS:A1990EB21700005 | - |
| dc.citation.woscount | 0 | - |
| Appears in Collections: | Articles | |
- A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
- GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES / YARN, KF;WANG, YH;CHANG, CY
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