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dc.contributor.authorCHUNG, SSSen_US
dc.date.accessioned2014-12-08T15:05:36Z-
dc.date.available2014-12-08T15:05:36Z-
dc.date.issued1990-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.52437en_US
dc.identifier.urihttp://hdl.handle.net/11536/4136-
dc.language.isoen_USen_US
dc.titleA COMPLETE MODEL OF THE IV CHARACTERISTICS FOR NARROW-GATE MOSFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.52437en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume37en_US
dc.citation.issue4en_US
dc.citation.spage1020en_US
dc.citation.epage1030en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1990DA03100017-
dc.citation.woscount9-
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