FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM

doi:10.1063/1.345346

標題:	FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM
作者:	TSUI, BY CHEN, MC 交大名義發表電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering
公開日期:	1-Apr-1990
URI:	http://dx.doi.org/10.1063/1.345346 http://hdl.handle.net/11536/4142
ISSN:	0021-8979
DOI:	10.1063/1.345346
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	67
Issue:	7
起始頁:	3524
結束頁:	3526
Appears in Collections:	Articles