IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING

标题:	IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING
作者:	WU, SL LEE, CL LEI, TF 交大名义发表电控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering
公开日期:	12-三月-1990
URI:	http://dx.doi.org/10.1063/1.102606 http://hdl.handle.net/11536/4156
ISSN:	0003-6951
DOI:	10.1063/1.102606
期刊:	APPLIED PHYSICS LETTERS
Volume:	56
Issue:	11
起始页:	1031
结束页:	1033
显示于类别：	Articles

APA	WU, S., LEE, C., & LEI, T. (1990). IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING. WOS:A1990CT09900016.
Bibtex	@article{WU1990IMPROVEMENT, title={IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING}, author={WU, SL and LEE, CL and LEI, TF}, journal={WOS:A1990CT09900016}, year={1990}, url={https://ir.lib.nycu.edu.tw/handle/11536/4156?locale=zh_CN}, }