增進鏡面光學損害抵抗能力於砷化鋁鎵高功率雷射二極體

Abstract

近年來,高功率雷射二極體的發展日益重要。然而瞬時光學災害卻是對高功率雷射二極體為一種非常致命的傷害，由於它在發生前沒有任何徵兆及跡象。因此本論文研究是致力於增進砷化鋁鎵雷射二極體的瞬時光學災害準位。並且將目前提升瞬時光學災害準位的各種改進方法加以分析與比較。本論文採用在此領域較少見的彎曲波導法作為提升850 nm砷化鋁鎵雷射二極體的瞬時光學災害準位實驗基礎。實驗的結果顯示採用彎曲波導法的砷化鋁鎵雷射二極體的瞬時光學災害準位可達190 mW以上，老化測試條件在定功率100 mW輸出及50 °C環境下可達450小時以上。然而採用傳統的砷化鋁鎵雷射二極體的瞬時光學災害準位為150 mW~170 mW之間，相同老化測試條件下只能操作0~23小時就損壞。

High power laser diode has gathered great importance in recent years. However,catastrophic optical damage is very hazardous degradation mode for high power laser diodes since it is silent and appears suddenly without a previous sign.The purpose of the the research presented in this thesis is to examine methods of improving catastrophic optical damage level for high power laser diodes and to demostrate a bent-waveguide structure on 850 nm AlGaAs laser diodes.To date, there has been relatively little research conducted on bent-waveguide laser.The result shows that the bent-waveguide AlGaAs laser diodes can effectively increase the catastrophic optical damage level over 190 mW。In addition,life time of aging test for the bent-waveguide AlGaAs laser diodes can operate over 450 hours under 100mW output and 50°C environment。For comparison, the conventional structure of AlGaAs laser diodes show 150 mW~170 mW of catastrophic optical damage level and 0~23 hours life。