HIGH BREAKDOWN P-CHANNEL INSB MOSFET

標題:	HIGH BREAKDOWN P-CHANNEL INSB MOSFET
作者:	TU, SL LAN, WH CHIOU, TS YANG, SJ HUANG, KF 電子物理學系光電工程學系 Department of Electrophysics Department of Photonics
公開日期:	1-Mar-1990
URI:	http://dx.doi.org/10.1143/JJAP.29.L398 http://hdl.handle.net/11536/4168
ISSN:	0021-4922
DOI:	10.1143/JJAP.29.L398
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	29
Issue:	3
起始頁:	L398
結束頁:	L400
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.