標題: | 重力場對催化金屬晶粒子成形控制在一維材料成長的製程最佳化 Process Optimization of Gravity Assisted Seeding Control Scheme for 1-D Material Growth |
作者: | 許倫豪 鄭裕庭 電子研究所 |
關鍵字: | 一維材料;倒金字塔奈米矽結構;金屬晶子控制;one-dimension material;Inverted Silicon Nano-Pyramid;seeding control |
公開日期: | 2008 |
摘要: | 本論文研究先前的實驗:利用重力的作用力以及特殊的倒金字塔形狀,可以同時控制金屬晶粒子的尺寸及形成的位置,並且用在一維方向上成長奈米碳管。經由製程的改善及最佳化,包括利用超音波震盪器,我們可以增加懸在倒金字塔形狀上方的二氧化矽層開孔的寬度。利用二氧化矽緩衝蝕刻(BOE)取代原先使用的稀釋氫氟酸,來蝕刻二氧化矽,可以有更好的蝕刻選擇。為了減少氣流對金屬晶粒子的影響,在密閉爐管中進行退火。以及增長退火的時間可以更有效的幫助金屬晶粒子往底部聚集。濺鍍鈷薄膜之後,我們先利用BOE把二氧化矽層以及上方的鈷取代原先是在濺鍍之後先退火再蝕刻二氧化矽層的製程,我們可以完全移除二氧化矽層以及鈷。於是新的製程可以確保改善了單一鈷粒子形成在倒金字塔形狀的最底部的良率。在先前的實驗合成出的奈米碳管可以證明,利用倒金字塔形的結構,可以控制金屬催化劑形成的位置,並且利用這個方法,我們可以合成出高密度且低花費的奈米碳管,並且控制成長奈米碳管的位置,對於日後要成長在一維方向上用來當作半導體應用的奈米碳管有很大的幫助。 This thesis studies the processes of gravity assisted seed scheme that previously proposed for 1-D material growth control [1]. Via process optimization including increasing the oxide mask opening by ultrasonication for better Co film deposition, choosing BOE instead dilute HF for better etching selectivity, using close thermal annealing environment for reducing air flow effect, and prolonging the thermal reflow time for completing seed agglomeration, cobalt can be sputtered into pyramid through the opening of oxide layer, and lifting off oxide and cobalt before annealing, we could lift off both oxide and cobalt above oxide layer entirely, the new seeding scheme proposed here can ensure the yield of a singular Co seed in the bottom of each inverted nano-pyramid. Preliminary CNT growth results indicate that the unity and localization of 1-D material growth can be realized using the seeding scheme in a patterned inverted silicon nano-pyramid that can facilitate for real high density and cost effective 1-D device array and circuit fabrication in terms of typical “top-down” IC manufacturing approach. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079611580 http://hdl.handle.net/11536/41709 |
Appears in Collections: | Thesis |