非對稱性LDD金氧半元件應用於射頻收發開關之研究

Abstract

本論文描述一個收發開關在超寬頻3.1-10.6GHz的應用，它採用串並聯的架構。這電路使用0.18微米互補式金氧半製程。非對稱式的LDD金氧半電晶體有較高的汲源極崩潰電壓，且被用在傳輸端。其好處在於可在傳輸端偏較大的電壓以改善功率線性度。除此之外也使用基極浮接的技術來改善收發開關的功率承載能力。在3.1到10.6GHz頻段當中，互補式金氧半收發開關呈現出的植入損耗在傳輸與接受狀態分別小於2.5dB與3.5dB，隔離度在此頻段分別為29.8-31.7dB與25-31.5 dB。量測到的1-dB功率壓縮點為24.5dBm。晶片面積為550微米 495微米。

This paper presents a T/R switch for ultra-wideband 3.1-10.6GHz application, and it was using series-shunt topology. The circuit is fabricated in 0.18μm CMOS process. The asymmetric-LDD MOS transistor has higher drain-source breakdown voltage and is used for the transmitter path. The advantage is the larger bias voltage on the transmitter path to improve the power linearity. Besides, the body-floating technique is also used to improve the power-handling capability of T/R switch. Within 3.1-10.6GHz, the CMOS T/R switch exhibits insertion loss of less than 2.5 dB and 3.5 dB in transmitter and receiver path, and isolation between 29.8-31.7, 25-31.5 dB, respectively. The measured 1-dB power compression point is 24.5 dBm. The die area is 550μm 495μm.