先進互補式金氧半電晶體及快閃式記憶元件中單一電荷效應之統計性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	邱榮標	en_US
dc.contributor.author	Chiu, Jung-Piao	en_US
dc.contributor.author	汪大暉	en_US
dc.contributor.author	Wang, Ta-Hui	en_US
dc.date.accessioned	2014-12-12T01:27:30Z	-
dc.date.available	2014-12-12T01:27:30Z	-
dc.date.issued	2012	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT079611843	en_US
dc.identifier.uri	http://hdl.handle.net/11536/41818	-
dc.description.abstract	本篇論文主要著重在單電子效應於先進互補式金氧半電晶體(advanced CMOS)及快閃式記憶元件(flash memory)之應用。高介電閘極氧化層(high-k)之可靠性議題，如電壓溫度引致不穩定(BTI)、隨機電報雜訊(RTN)之研究，亦有所探討。更利用蒙地卡羅模擬進一步驗證理論及實驗。	zh_TW
dc.description.abstract	This thesis will focus on single charge phenomena characterization and its applications to advanced CMOS and non-volatile flash memory. The reliability issues, such as negative bias temperature instability (NBTI) and random telegraph noise (RTN) in advanced gate dielectric (high-k), are studied statistically. Monte Carlo simulations are also performed to corroborate our model and experiment data.	en_US
dc.language.iso	en_US	en_US
dc.subject	溫壓引致不穩定性	zh_TW
dc.subject	隨機電報訊號	zh_TW
dc.subject	蒙地卡羅模擬	zh_TW
dc.subject	快閃式記憶元件	zh_TW
dc.subject	統計性研究	zh_TW
dc.subject	NBTI	en_US
dc.subject	RTN	en_US
dc.subject	Monte Carlo simulation	en_US
dc.subject	Flash Memory	en_US
dc.subject	Statistical Study	en_US
dc.title	先進互補式金氧半電晶體及快閃式記憶元件中單一電荷效應之統計性研究	zh_TW
dc.title	Statistical Study of Single Charge Phenomena in Advanced CMOS and Flash Memory	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
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