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dc.contributor.author邱榮標en_US
dc.contributor.authorChiu, Jung-Piaoen_US
dc.contributor.author汪大暉en_US
dc.contributor.authorWang, Ta-Huien_US
dc.date.accessioned2014-12-12T01:27:30Z-
dc.date.available2014-12-12T01:27:30Z-
dc.date.issued2012en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079611843en_US
dc.identifier.urihttp://hdl.handle.net/11536/41818-
dc.description.abstract本篇論文主要著重在單電子效應於先進互補式金氧半電晶體(advanced CMOS)及快閃式記憶元件(flash memory)之應用。高介電閘極氧化層(high-k)之可靠性議題,如電壓溫度引致不穩定(BTI)、隨機電報雜訊(RTN)之研究,亦有所探討。更利用蒙地卡羅模擬進一步驗證理論及實驗。zh_TW
dc.description.abstractThis thesis will focus on single charge phenomena characterization and its applications to advanced CMOS and non-volatile flash memory. The reliability issues, such as negative bias temperature instability (NBTI) and random telegraph noise (RTN) in advanced gate dielectric (high-k), are studied statistically. Monte Carlo simulations are also performed to corroborate our model and experiment data.en_US
dc.language.isoen_USen_US
dc.subject溫壓引致不穩定性zh_TW
dc.subject隨機電報訊號zh_TW
dc.subject蒙地卡羅模擬zh_TW
dc.subject快閃式記憶元件zh_TW
dc.subject統計性研究zh_TW
dc.subjectNBTIen_US
dc.subjectRTNen_US
dc.subjectMonte Carlo simulationen_US
dc.subjectFlash Memoryen_US
dc.subjectStatistical Studyen_US
dc.title先進互補式金氧半電晶體及快閃式記憶元件中單一電荷效應之統計性研究zh_TW
dc.titleStatistical Study of Single Charge Phenomena in Advanced CMOS and Flash Memoryen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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