THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)

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DC Field	Value	Language
dc.contributor.author	HONG, JW	en_US
dc.contributor.author	CHEN, YW	en_US
dc.contributor.author	LAIH, WL	en_US
dc.contributor.author	FANG, YK	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	GONG, C	en_US
dc.date.accessioned	2014-12-08T15:05:39Z	-
dc.date.available	2014-12-08T15:05:39Z	-
dc.date.issued	1990-02-01	en_US
dc.identifier.issn	0018-9197	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/3.44959	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4183	-
dc.language.iso	en_US	en_US
dc.title	THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/3.44959	en_US
dc.identifier.journal	IEEE JOURNAL OF QUANTUM ELECTRONICS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	2	en_US
dc.citation.spage	280	en_US
dc.citation.epage	284	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990CQ81400014	-
dc.citation.woscount	11	-
Appears in Collections:	Articles

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