標題: Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications
作者: Wu, Chien-Ying
Hsu, Heng-Tung
Kuo, Chien-I
Chang, Edward Yi
Chen, Yu-lin
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2008
摘要: The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In(0.53)Ga(0.47)As sub-channel were demonstrated. The drain current was 870 mA/mm (V(ds)=0.4V, V(gs) OV) and maximum g(m) was 1750 mS/mm (V(ds)=0.5V, V(gs)=-0.65V). The devices showed high current gain cutoff frequency (f(T)) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAS HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.
URI: http://hdl.handle.net/11536/419
ISBN: 978-1-4244-2641-6
期刊: APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5
起始頁: 2098
結束頁: 2101
Appears in Collections:Conferences Paper