使用觸媒化學氣相沈積法控制本質氫化微晶矽薄膜結晶度之研究

Abstract

對於氫化微晶矽薄膜太陽能電池而言，結晶率是相當重要的議題。本實驗是使用觸媒化學沉積法沉積其微晶矽之薄膜，調查調變氫氣流量，對於控制結晶率之研究，成功研究出氫化微結晶矽薄膜厚度1.5微米，其結晶率控制為60%。在膜質及電性分析方面，將使用傅利葉轉換紅外線分析儀 (FTIR) 及 光、暗電導，進行膜質之分析。 此外，由於氫化微結矽薄膜太陽能電池，其 p 型多半是使用微結晶薄膜之結構，因此，在沉積本質氫化微晶矽薄膜時，是必要考慮基板之效應，本實驗，將使用三種基板，分別為非晶矽薄膜/玻璃、微晶矽薄膜/玻璃、玻璃，討論其微晶矽薄膜成長之差異性。結果指出，鍍在非晶矽薄膜/玻璃、微晶矽薄膜/玻璃之基板，其鍍率較玻璃基板高；另一方面，由於template effect，使得鍍在微晶矽薄膜/玻璃之基板，其結晶率為最高，其次為玻璃基板，最後則是非晶矽薄膜/玻璃之基板。

The crystalline fraction is an important issue for the hydrogenated microcrystalline silicon (μc-Si:H) thin film solar cell. To keep crystalline fraction by catalytic chemical vapor deposition (Cat-CVD), we investigated the controlling of H2 dilution ratio in this study. In addition, the information on microcrystalline silicon bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR) and we have used photo conductivity and dark conductivity to analyze hydrogenated microcrystalline silicon (μc-Si:H) thin film. In addition, we have proceeded experiment about substrate temperature to deposit hydrogenated microcrystalline silicon thin film. And then we have discussed substrate effect probably influence our experiment, so we will use glass substrate、amorphous silicon / glass substrate and microcrystalline silicon / glass substrate to discuss in this study.