APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIU, WC	en_US
dc.contributor.author	LOUR, WS	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:46Z	-
dc.date.available	2014-12-08T15:05:46Z	-
dc.date.issued	1989-09-01	en_US
dc.identifier.issn	0947-8396	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/BF00616861	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4297	-
dc.language.iso	en_US	en_US
dc.title	APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/BF00616861	en_US
dc.identifier.journal	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING	en_US
dc.citation.volume	49	en_US
dc.citation.issue	3	en_US
dc.citation.spage	321	en_US
dc.citation.epage	324	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1989AM13900014	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文