标题: | 元件图案相依的金属诱化侧向结晶之复晶矽薄膜电晶体的制作与特性研究 Fabrication and Characterization of Pattern-Depended Metal Induced Lateral Crystallization Polysilicon Thin Film Transistors with Nano Wire Channel |
作者: | 吴元均 Yuan-Chun Wu 罗正忠 Jen-Chung Lou 电子研究所 |
关键字: | 金属诱化侧向结晶;元件图案相依的金属诱化侧向结晶;迁移率;短通道效应;复晶矽薄膜电晶体;主动式薄膜电晶体液晶显示器;Pattern-depended metal induced lateral crystallization;Pattern-depended metal induced lateral crystallization;Mobility;Short channel effect;Polysilicon thin film transistor;AMLCD |
公开日期: | 2003 |
摘要: | 在此论文中,我们首先提出一个以标准四道光罩,所制作之元件图案相依的金属诱化侧向结晶之复晶矽薄膜电晶体。根据实验结果显示,由于载子迁移率的提升以及较佳的闸极控制能力,电晶体的电特性被大幅的改善。研究中发现,载子迁移率是与元件的通道宽度相依。对同样闸极长度为5 um的元件而言,迁移率随着通道宽度的缩减而增加,这是由于窄通道效应提升了复晶矽晶粒的侧向尺寸。此外,实验结果也显示出,对相同十条奈米通道的元件,随着闸极长度的下降,载子的迁移率亦随之提升。这是由于闸极所跨的通道内,存在较少的复晶矽晶粒边界缺陷所造成的。此外在短通道元件的研究,藉由比较单一通道与十条奈米通道的元件,我们发现单一通道的元件展现出接触碰穿的现象,然而十条奈米通道的元件,依然保持着良好的开关特性。此现象可被解释为,十条奈米通道的元件,由于它的环绕式闸极的结构,使其有较佳的闸极控制能力来降低横向电场,以抑制短通道的效应。此元件图案相依的,金属诱化侧向结晶之复晶矽薄膜电晶体的制程,完全相容于目前互补式金氧半(CMOS)场效电晶体的技术,而且不需要额外的光罩制程。此元件可被运用于高效能的复晶矽薄膜电晶体积体电路,尤其是在主动式薄膜电晶体液晶显示器(AMLCD) ,以及三维立体的金氧半场效电晶体积体电路。 In this thesis, we firstly develop a new pattern-depended MILC thin film transistors (PDM TFTs) with standard four masks process. The experiment results demonstrate that the electrical properties of PDM TFT’s can be significantly improvement by carrier mobility enhancement and superior gate controllability. Experiment results show that the field effect mobility is highly depended on multi-channel width. For the same gate length L=5um, the field effect mobility increasing with channel number, resulting its polysilicon grain size enhanced by channel width limitation effect. In addition, experiment results also show that at the same ten multiple nano-wire channels, the field effect mobility increasing with gate length decreasing from L = 10 um, L = 5 um, L = 2 um to L = 1 um, resulting its polysilicon grain boundary defects lowering. Moreover, in short channel effect (L = 1um) study, comparing the single channel and ten multiple nano-wire channels devices. The single channel TFT shows punch-through phenomena. It ca be explain that the ten multiple nano-wire channels TFT has the better gate controllability due to its nano-wires structure behavior than single channel TFT. The lateral electrical field of ten multiple nano-wire channels TFT can be effectively reduced by additional two side-gates control. These PDM TFTs process is compatible with CMOS technology, and involves no any extra mask process. Such PDM TFTs are thus highly promising for use in future high-performance polysilicon TFT applications, especially in AMLCD and 3D MOSFET stacked circuits. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009111559 http://hdl.handle.net/11536/43224 |
显示于类别: | Thesis |
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