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dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorYANG, BJen_US
dc.contributor.authorCHANG, PHen_US
dc.date.accessioned2014-12-08T15:05:52Z-
dc.date.available2014-12-08T15:05:52Z-
dc.date.issued1989-03-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/4/3/007en_US
dc.identifier.urihttp://hdl.handle.net/11536/4400-
dc.language.isoen_USen_US
dc.titleCHARACTERISTICS OF TITANIUM SILICIDE FORMED BY SI/MO/TI TRILAYER METALLIZATIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/4/3/007en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume4en_US
dc.citation.issue3en_US
dc.citation.spage177en_US
dc.citation.epage183en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1989T587400007-
dc.citation.woscount2-
Appears in Collections:Articles


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