完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHIOU, BS | en_US |
dc.contributor.author | YANG, BJ | en_US |
dc.contributor.author | CHANG, PH | en_US |
dc.date.accessioned | 2014-12-08T15:05:52Z | - |
dc.date.available | 2014-12-08T15:05:52Z | - |
dc.date.issued | 1989-03-01 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/4/3/007 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4400 | - |
dc.language.iso | en_US | en_US |
dc.title | CHARACTERISTICS OF TITANIUM SILICIDE FORMED BY SI/MO/TI TRILAYER METALLIZATION | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0268-1242/4/3/007 | en_US |
dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 177 | en_US |
dc.citation.epage | 183 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:A1989T587400007 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |