| 标题: | TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS |
| 作者: | LEE, CP LIU, TH LEI, TF WU, SC 奈米中心 Nano Facility Center |
| 公开日期: | 15-一月-1989 |
| URI: | http://dx.doi.org/10.1063/1.343097 http://hdl.handle.net/11536/4411 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.343097 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 65 |
| Issue: | 2 |
| 起始页: | 642 |
| 结束页: | 645 |
| 显示于类别： | Articles |
- COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS / LEE, CP;LIU, TH;WU, SC
- MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS / CHUANG, HF;LEE, CP;WU, SC
- 碳掺杂矽奈米线全包覆式闸极元件技术研究 / 崔秉钺;Tsui Bing-Yue
- STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION / CHANG, EY;LAI, YL;LIN, KC;CHANG, CY
- THE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTS / TSENG, HH;WU, CY
- A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION / LOU, YS;WU, CY
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