A CHARGE-BASED CAPACITANCE MODEL OF SHORT-CHANNEL MOSFETS

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DC Field	Value	Language
dc.contributor.author	CHUNG, SSS	en_US
dc.date.accessioned	2014-12-08T15:05:53Z	-
dc.date.available	2014-12-08T15:05:53Z	-
dc.date.issued	1989-01-01	en_US
dc.identifier.issn	0278-0070	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/43.21813	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4414	-
dc.language.iso	en_US	en_US
dc.title	A CHARGE-BASED CAPACITANCE MODEL OF SHORT-CHANNEL MOSFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/43.21813	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS	en_US
dc.citation.volume	8	en_US
dc.citation.issue	1	en_US
dc.citation.spage	1	en_US
dc.citation.epage	7	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1989R872500001	-
dc.citation.woscount	5	-
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